Comparison analysis of three value logic 8T CNTFET SRAM Cell with 6 CMOS SRAM CELL at 32nm technology
نویسندگان
چکیده
منابع مشابه
SRAM CELL BASED ON CNTFET AT 32nm TECHNOLOGY
The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. Carbon Nanotube Field Effect Transistor (CNFET) is used for high performance, high stability and low-power circuit designs as an alternative material to silicon in recent years. Therefore Design of SRAM Cell based on CNTFET is important for Low-power cache memory. In cells, the bit-lines are the most p...
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MOS transistor play a vital role in today VLSI technology. In CMOS based design, symmetry should be followed in circuit operation. Most of the complex circuits are allowed to design in CMOS, however, there are several drawbacks present in this complementary based design. CMOS has lost its credentiality during scaling beyond 32nm. Scaling down causes severe short channel effects which are diffic...
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As silicon semiconductor device feature size scales down to the nanometer range, planar bulk CMOS design and fabrication encounter significant challenges nowadays. Carbon Nanotube Field Effect Transistor (CNTFET) has been introduced for high stability, high performance and low power SRAM cell design as an alternative material. Technology scaling demands a decrease in both VDD and VT to sustain ...
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This paper addresses to enhance the stability of8T SRAM bitcell by lowering its leakage power. Scaling down of process parameters such as supply voltage affects the Read ability and Write stability of the cell. As number of transistors on chip increases power dissipation also increases and as a result of this stability of the cell gets affected. This paper aims at reducing the leakage power and...
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ژورنال
عنوان ژورنال: International Journal of Reconfigurable and Embedded Systems (IJRES)
سال: 2019
ISSN: 2089-4864,2089-4864
DOI: 10.11591/ijres.v8.i2.pp107-113